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Investigating the effect of pH on the structural and optoelectronic properties of iron disulfide (FeS₂) nanostructures synthesized by the electrodeposition method
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Maryam Zebarjad *   |
| Department of pyysics, Dez.C., Islamic Azad University, Dezful, Iran , zebarjad.m@iau.ac.ir |
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Abstract: (24 Views) |
In this study, iron disulfide (FeS₂) nanostructured thin films were fabricated at different pH values on Fluorine-doped Tin Oxide (FTO) substrates via the electrodeposition method. The effect of solution pH, as an influential parameter, on the physical properties of the deposited thin films was investigated. The prepared thin films were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and photoluminescence (PL) spectroscopy. XRD analysis revealed the cubic phase of iron disulfide (FeS₂) after the sulfurization process. The phase purity of the synthesized samples was confirmed by Raman spectroscopy, while the presence of Fe and S elements was verified by EDX analysis. FESEM images showed that varying the pH alters the morphology, surface uniformity, and particle size of the films. Mott-Schottky analysis indicated that the samples exhibit p-type conductivity, with the carrier density increasing as the pH decreases. The highest carrier density, measured by this analysis, was 58.75 × 10¹² /cm⁻³ for the sample prepared at the lowest pH. The bandgap value, calculated from photoluminescence analysis, was found to be 1.63 eV. This bandgap ensures efficient absorption in the visible region, paving the way for the application of these structures in photovoltaic devices. Based on the obtained results, this material demonstrates significant potential for application in the fabrication of high-efficiency optoelectronic devices |
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| Keywords: FeS₂ nanostructures, Pyrite, Electrodeposition, Mott-Schottky analysis, Optoelectronic properties, Flat band voltage. |
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Full-Text [PDF 1822 kb]
(17 Downloads)
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Type of Study: Research |
Subject:
Special
Received: 2025/11/23 | Accepted: 2026/02/19 | Published: 2026/03/1
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| * Corresponding Author Address: dezful branch |
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